interface state

the effect of interface state charges on the field effect mobility of n channel 6h sic mosfet is analyzed based on the nonuniform distribution of interface state density in the energy gap.

针对界面态密度在禁带中的不均匀分布，分析了界面态电荷对n沟6H碳化硅MOSFET场效应迁移率的影响。

when a session times out, you can re-authenticate and then continue where you left off; the user interface state is not lost.

当调用结束之后，您就可以确认然后继续；用户界面状态并没有丢失。

physical mechanisms such as carrier trapping , interface state filling, and temperature related deterioration are revealed.

揭示了系统的纳米晶存储物理机制，例如电荷俘获、界面态填充和温度特性。

The experiment result shows that the holes generated by avalanche can be injected into gate oxide of a NMOSFET biased into snapback, and then both hole trapping and interface state generation can be found.

实验结果发现突发击穿（snapback），偏置下雪崩热空穴注入NMOSFET栅氧化层，产生界面态，同时空穴会陷落在氧化层中。

controlling interface state to lower electric noise and surface movable charge

控制界面态减少表面可动电荷降低晶体管的电噪声

and a case study on the interface state effectiveness and concordance of q company in shanxi province is made.

最后对陕西省Q公司的界面状态有效性（和谐性）问题进行案例研究。

Test Case Generation Based on Interface State Cause-Effect Chart

基于界面状态因果图的测试用例生成

Influence of Base Plate Thickness on the Interface State of Explosive Composite Material

基板厚度对爆炸复合材料界面状态的影响

adaptation of materials with low work function for the upper electrode and introduction of the interface state control layer will decrease the driving voltage and increase the electron emission ratio greatly.

选择具有低功函数的上电极材料，并且引入界面态控制层将能够降低驱动电压和提高电子发射率。

In this paper the series resistance for silicon MIS/ IL solar cells related with the thickness of evaporated SiO coating, the fixed positive charge density in the coating and the interface state density has been indicated.

本文讨论了MIS/IL太阳电池的串联电阻与蒸发SiO膜厚度、膜中的固定正电荷密度、界面态密度之间的关系。

influences of collision angle on the interface state of explosive compound materials

碰撞角对爆炸复合材料界面状态的影响

he exact solutions of interface state eigenvalue problems of lattice vibrations in a monoatomic chain of symmetry a-b-a structure are investigated by use of the interface rescaling approach. the necessary and sufficient condition for the existence of such interface states is obtained exactly and analytically.

采用界面重标度方法，严格求解了对称A－B－A结构的原子晶格链中晶格振动的界面态的本征值问题，获得了界面态存在的充分必要条件的精确解析式。

these changes are related to the graphitization and the interface state between the fiber and the matrix.

这与材料石墨化度的提高和基体炭与炭纤维的界面结合状况有关。